The leakage current by means of the dielectric is discovered to be supported by the oxygen vacancies, which are likely to segregate at hafnia grain boundaries. We simulate the evolution of a current path through the forming operation using the multiphonon lure-assisted tunneling (TAT) electron transport model. The forming process is analyzed inside the concept of dielectric breakdown, www.redsea.gov.eg which exhibits a lot shorter characteristic occasions than the electroforming process conventionally employed to describe the formation of the conductive filament. The resulting conductive filament is calculated to provide a non-uniform temperature profile along its length through the reset operation, promoting preferential oxidation of the filament tip. A thin dielectric barrier ensuing from the CF tip oxidation is found to control filament resistance in the high resistive state. Subject-driven dielectric breakdown of this barrier throughout the set operation restores the filament to its initial low resistive state. These findings point to the critical significance of controlling the filament cross part throughout forming to achieve low energy RRAM cell switching.